Title :
Novel Si integrated inductor and transformer structures for RF IC design
Author :
Koutsoyannopoulos, Yorgos ; Papananos, Yannis ; Bantas, Sotiris ; Alemanni, Carlo
Author_Institution :
Microelectron. Circuit Design Group, Nat. Tech. Univ. of Athens, Greece
Abstract :
Planar and 3D Si passive inductive structures are presented, with respect to their application in RF ICs. The modeling of the structures is realized by the use of a custom CAD tool, SISP. It Is shown how, for the first time, fast answers to complex questions can be obtained before fabrication, such as: inductance boost of up to 600% in three-layer spiral inductors compared to planar ones, with no cost in quality factor; optimization of the insertion and return losses of integrated transformers under area reduction schemes; modeling of practical integrated baluns; effect of physical separation on the crosstalk between inductors. The accuracy of modeling results is established through measurements in an array of fabricated structures
Keywords :
MMIC; Q-factor; UHF integrated circuits; baluns; circuit CAD; crosstalk; elemental semiconductors; inductors; integrated circuit design; integrated circuit modelling; losses; silicon; transformers; RF IC design; SISP; Si; area reduction schemes; crosstalk; custom CAD tool; fabricated structures; insertion losses; integrated baluns; integrated inductor structures; integrated transformer structures; integrated transformers; modeling; passive inductive structures; quality factor; three-layer spiral inductors; Application specific integrated circuits; Cost function; Fabrication; Inductance; Inductors; Insertion loss; Q factor; Radio frequency; Radiofrequency integrated circuits; Spirals;
Conference_Titel :
Circuits and Systems, 1999. ISCAS '99. Proceedings of the 1999 IEEE International Symposium on
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-5471-0
DOI :
10.1109/ISCAS.1999.780819
