Title :
High-Efficiency Light Emitters using Gallium-Arsenide Deep-Centers for Long-Distance Fiber-Optics
Author_Institution :
Yale Univ., New Haven
Abstract :
We demonstrate the first LEDs at 1.3-1.5 mum using GaAs deep-centers having higher (70%) efficiencies, lower absorption loss, more temperature-insensitive luminescence, larger Einstein B-coefficient than bulk InGaAs. This is an enabling technology.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; light absorption; light emitting diodes; luminescence; optical fibres; Einstein B-coefficient; GaAs; InGaAs; LED; absorption loss; gallium-arsenide deep-centers; high-efficiency light emitters; light emitting diodes; long-distance fiber-optics; temperature-insensitive luminescence; wavelength 1.3 mum to 1.5 mum; Absorption; Gallium arsenide; Indium gallium arsenide; Light emitting diodes; Luminescence; Photoluminescence; Photonic band gap; Quantum well devices; Temperature; Wavelength measurement;
Conference_Titel :
Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-834-6
DOI :
10.1109/CLEO.2007.4453008
