Title :
The sputtered dielectric thin film layer and their properties
Author :
Pelikánová, Ivana Beshajová ; Cinert, Jakub
Author_Institution :
Dept. of Electrotechnol., CTU in Prague, Prague, Czech Republic
Abstract :
The work is focused on investigation of properties of thin film layer in dependence on deposition process. Dielectric AlN thin film layers were prepared by using of aluminum target and reactive sputtering. The capacitance, dielectric loss and thickness of thin film capacitors were analyzed. The properties of thin film dielectric layer during sputtering are influenced by power of plasma generator, partial pressure of reactive gas in sputtering chamber and time of sputtering. Thickness of dielectric layer is evaluated by using confocal microscope.
Keywords :
III-V semiconductors; aluminium compounds; dielectric losses; dielectric thin films; permittivity; semiconductor thin films; sputter deposition; thin film capacitors; wide band gap semiconductors; AlN; aluminum target; capacitance; confocal microscope; dielectric loss; permittivity; plasma generator; reactive sputtering; sputtered dielectric thin film layer; thin film capacitors; Aluminum; Capacitance; Capacitors; Dielectric measurements; Dielectric substrates; Dielectric thin films; Optical microscopy; Plasma measurements; Sputtering; Thin film circuits;
Conference_Titel :
Electronics Technology, 2009. ISSE 2009. 32nd International Spring Seminar on
Conference_Location :
Brno
Print_ISBN :
978-1-4244-4260-7
DOI :
10.1109/ISSE.2009.5207055
