The sputtered dielectric thin film layer and their properties

Author

Pelikánová, Ivana Beshajová ; Cinert, Jakub

Author_Institution

Dept. of Electrotechnol., CTU in Prague, Prague, Czech Republic

fYear

2009

fDate

13-17 May 2009

Firstpage

1

Lastpage

4

Abstract

The work is focused on investigation of properties of thin film layer in dependence on deposition process. Dielectric AlN thin film layers were prepared by using of aluminum target and reactive sputtering. The capacitance, dielectric loss and thickness of thin film capacitors were analyzed. The properties of thin film dielectric layer during sputtering are influenced by power of plasma generator, partial pressure of reactive gas in sputtering chamber and time of sputtering. Thickness of dielectric layer is evaluated by using confocal microscope.

Keywords

III-V semiconductors; aluminium compounds; dielectric losses; dielectric thin films; permittivity; semiconductor thin films; sputter deposition; thin film capacitors; wide band gap semiconductors; AlN; aluminum target; capacitance; confocal microscope; dielectric loss; permittivity; plasma generator; reactive sputtering; sputtered dielectric thin film layer; thin film capacitors; Aluminum; Capacitance; Capacitors; Dielectric measurements; Dielectric substrates; Dielectric thin films; Optical microscopy; Plasma measurements; Sputtering; Thin film circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics Technology, 2009. ISSE 2009. 32nd International Spring Seminar on

Conference_Location

Brno

Print_ISBN

978-1-4244-4260-7

Type

conf

DOI

10.1109/ISSE.2009.5207055

Filename

5207055