DocumentCode
3012400
Title
Design of highly-efficient power-controllable CMOS class E RF power amplifiers
Author
Tu, Steve Hung-Lung ; Toumazou, Chris
Author_Institution
Dept. of Electr. & Electron. Eng., Imperial Coll. of Sci., Technol. & Med., London, UK
Volume
2
fYear
1999
fDate
36342
Firstpage
602
Abstract
A highly-efficient, power-controllable CMOS class E RF power amplifier is described. The power amplifier operates at 1.8 GHz and simulated with a 0.6 μm CMOS process. By employing controllable capacitance for the output matching network, high power efficiencies can be maintained for a wide range of output power at a supply voltage of 2.5 V
Keywords
CMOS analogue integrated circuits; UHF integrated circuits; UHF power amplifiers; capacitance; impedance matching; power control; 0.6 micron; 1.8 GHz; 2.5 V; CMOS RF power amplifiers; controllable capacitance; high power efficiencies; highly-efficient power amplifiers; output matching network; power-controllable class-E amplifiers; CMOS process; Capacitance; High power amplifiers; Impedance matching; Power amplifiers; Power generation; Process control; Radio frequency; Radiofrequency amplifiers; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 1999. ISCAS '99. Proceedings of the 1999 IEEE International Symposium on
Conference_Location
Orlando, FL
Print_ISBN
0-7803-5471-0
Type
conf
DOI
10.1109/ISCAS.1999.780832
Filename
780832
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