Title :
Design of highly-efficient power-controllable CMOS class E RF power amplifiers
Author :
Tu, Steve Hung-Lung ; Toumazou, Chris
Author_Institution :
Dept. of Electr. & Electron. Eng., Imperial Coll. of Sci., Technol. & Med., London, UK
Abstract :
A highly-efficient, power-controllable CMOS class E RF power amplifier is described. The power amplifier operates at 1.8 GHz and simulated with a 0.6 μm CMOS process. By employing controllable capacitance for the output matching network, high power efficiencies can be maintained for a wide range of output power at a supply voltage of 2.5 V
Keywords :
CMOS analogue integrated circuits; UHF integrated circuits; UHF power amplifiers; capacitance; impedance matching; power control; 0.6 micron; 1.8 GHz; 2.5 V; CMOS RF power amplifiers; controllable capacitance; high power efficiencies; highly-efficient power amplifiers; output matching network; power-controllable class-E amplifiers; CMOS process; Capacitance; High power amplifiers; Impedance matching; Power amplifiers; Power generation; Process control; Radio frequency; Radiofrequency amplifiers; Voltage control;
Conference_Titel :
Circuits and Systems, 1999. ISCAS '99. Proceedings of the 1999 IEEE International Symposium on
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-5471-0
DOI :
10.1109/ISCAS.1999.780832
