Influence of dopant species on electron mobility in InP

Author

Köpf, Ch ; Kaiblinger-Grujin, G. ; Kosina, H. ; Selberherr, S.

Author_Institution

Inst. for Microelectron., Tech. Univ. Vienna, Austria

fYear

1997

fDate

11-15 May 1997

Firstpage

280

Lastpage

283

Abstract

We present a theoretical reassessment of electron mobility in doped InP with respect to different doping species. Using Thomas-Fermi theory in the energy functional formulation we describe the charge density of the individual impurity ion. Analytical expressions for the scattering rate are calculated based on a variational expression of Schwinger. Employing these results in a Monte Carlo calculation we find no significant dependence of mobility on doping species up to 10¹⁸ cm^-3. For higher concentrations an increasing difference is observed which reaches 25% at 10¹⁹ cm^-3 for Si and Te doping

Keywords

III-V semiconductors; Monte Carlo methods; Thomas-Fermi model; electron mobility; impurity scattering; indium compounds; semiconductor doping; variational techniques; InP; InP:Si; InP:Te; Monte Carlo simulation; Schwinger variational theory; Thomas-Fermi theory; charge density; dopant species; electron mobility; energy functional; impurity ion; scattering rate; Approximation methods; Doping; Electron mobility; Impurities; Indium phosphide; Microelectronics; Monte Carlo methods; Scattering; Semiconductor process modeling; Tellurium;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1997., International Conference on

Conference_Location

Cape Cod, MA

ISSN

1092-8669

Print_ISBN

0-7803-3898-7

Type

conf

DOI

10.1109/ICIPRM.1997.600126

Filename

600126