DocumentCode :
3013212
Title :
A new memristor based on NiTi smart alloys
Author :
Kyriakides, Evripides ; Hadjistassou, Constantinos ; Georgiou, Julius
Author_Institution :
Department of Electrical and Computer Engineering, University of Cyprus, Nicosia 1678, Cyprus
fYear :
2012
fDate :
20-23 May 2012
Firstpage :
1403
Lastpage :
1406
Abstract :
With the recent discovery of the memristor, and following the initial realization based on titanium dioxide (TiO2), a plethora of potential device implementations have emerged. In this paper we present a novel memristive device based on a nickel titanium (NiTi) smart alloy. The proposed memristors are very practical in that it is possible to add a smart metal layer on an existing semiconductor process with very few extra masks. By patterning different widths and lengths of these memristors, the designer can affect the properties of the memristor. Unlike memristors designed for memory storage applications, these devices can return to their original state over shorter time scales, thus lending themselves to dynamic neural processes, which are key components required for future biomimetic computer architectures.
Keywords :
Atmospheric modeling; Computational modeling; Mathematical model; Memristors; Metals; Temperature measurement; Wires;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems (ISCAS), 2012 IEEE International Symposium on
Conference_Location :
Seoul, Korea (South)
ISSN :
0271-4302
Print_ISBN :
978-1-4673-0218-0
Type :
conf
DOI :
10.1109/ISCAS.2012.6271506
Filename :
6271506
Link To Document :
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