DocumentCode
3013319
Title
Compact, Low-Power, High-Speed Silicon Electro-Optic Modulator
Author
Gan, F. ; Spector, S.J. ; Geis, M.W. ; Grein, M.E. ; Schulein, R.T. ; Yoon, J.U. ; Lyszczarz, T.M. ; Kärtner, F.X.
Author_Institution
Massachusetts Inst. of Technol., Cambridge
fYear
2007
fDate
6-11 May 2007
Firstpage
1
Lastpage
2
Abstract
A 250 mum long, CMOS-compatible, PIN diode Mach-Zehnder modulator has been fabricated with response extending to 13 GHz. Modeling shows that precompensation enables the fabrication of ultracompact 10 GHz 3 dB-bandwidth, optically broadband modulators.
Keywords
CMOS integrated circuits; Mach-Zehnder interferometers; electro-optical modulation; modulators; p-i-n diodes; silicon; CMOS-compatible modulator; PIN diode Mach-Zehnder modulator; Si; bandwidth 10 GHz; high-speed silicon electro-optic modulator; optically broadband modulators; size 250 mum; Bandwidth; CMOS technology; Electrooptic modulators; High speed optical techniques; Optical devices; Optical interferometry; Optical modulation; Optical waveguides; Silicon; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
Conference_Location
Baltimore, MD
Print_ISBN
978-1-55752-834-6
Type
conf
DOI
10.1109/CLEO.2007.4453068
Filename
4453068
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