DocumentCode
3013485
Title
Towards a Ge-based laser for CMOS applications
Author
Liu, Jifeng ; Sun, Xiaochen ; Becla, Piotr ; Kimerling, Lionel C. ; Michel, Jurgen
Author_Institution
Microphotonics Center, Massachusetts Inst. of Technol., Cambridge, MA
fYear
2008
fDate
17-19 Sept. 2008
Firstpage
16
Lastpage
18
Abstract
We report experimental observation of direct band gap photoluminescence (PL) and optical bleaching of band-engineered epitaxial Ge-on-Si at room temperature, confirming that this material is a promising candidate for efficient light emitting devices on Si.
Keywords
elemental semiconductors; germanium; optical saturable absorption; photoluminescence; semiconductor epitaxial layers; silicon; Ge-Si; Ge-based laser; direct band gap photoluminescence; light emitting devices; optical bleaching; Bleaching; Laser applications; Optical materials; Optical pumping; Photoluminescence; Photonic band gap; Semiconductor process modeling; Stimulated emission; Temperature; Tensile strain;
fLanguage
English
Publisher
ieee
Conference_Titel
Group IV Photonics, 2008 5th IEEE International Conference on
Conference_Location
Cardiff
Print_ISBN
978-1-4244-1769-8
Electronic_ISBN
978-1-4244-1768-1
Type
conf
DOI
10.1109/GROUP4.2008.4638081
Filename
4638081
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