Title :
Relaxation of upper laser levels in terahertz silicon lasers
Author :
Pavlov, Sergey G. ; Hübers, Heinz-Wilhelm ; Zhukavin, Roman Kh ; Phillips, P.Jonathan ; Carder, Damian A. ; Hovenier, J. Niels ; Klaassen, Tjeerd O. ; Shastin, Valery N.
Author_Institution :
Inst. of Planetary Res., German Aerosp. Center, Berlin
Abstract :
Relaxation of lower exited states of group-V donors in silicon which serve as upper working states of intracenter silicon lasers has been experimentally determined. The measurements show that decay times of 2p0 and 2pplusmn states lie in the range of 4-90 ps.
Keywords :
elemental semiconductors; excited states; semiconductor lasers; silicon; submillimetre wave lasers; Si; decay times; exited states; group-V donors; intracenter silicon laser; terahertz silicon laser; upper laser level relaxation; Absorption; Free electron lasers; Laser excitation; Laser theory; Laser transitions; Physics; Probes; Pump lasers; Quantum cascade lasers; Silicon;
Conference_Titel :
Group IV Photonics, 2008 5th IEEE International Conference on
Conference_Location :
Cardiff
Print_ISBN :
978-1-4244-1769-8
Electronic_ISBN :
978-1-4244-1768-1
DOI :
10.1109/GROUP4.2008.4638085
