Visible to infrared light emission from reverse defect engineered silicon junctions

Experimental results of light emission by defect engineered silicon pn-junctions, operated at room temperature under reverse bias, are presented. The devices emit light from the visible up to the infrared. As will be shown the emission is enhanced by the usage of a defect engineered layer structure. For the present research an improvement up to 280% in efficiency is observed. Defect engineered layers also provide a highly focused light emission - emission spots of app. 1 mum in diameter are observable. The data of two different defect engineered samples will be compared with a defect free reference to show the advantages of defect engineered layers.