Title :
Light emitting transistors using silicon quantum dots in an organic matrix
Author :
Aggarwal, Gagan ; Pi, Xiaodong ; Lu, Stephen A Campbellan P ; Ramirez, Ayax D. ; Kortshagen, Uwe ; Campbell, Stephen A.
Author_Institution :
EeE Dept., Univ. of Minnesota, Minneapolis, MN
Abstract :
Junction field effect light emitting transistors (JFELET) were fabricated using silicon quantum dots in a conducting polymer matrix. The quantum dots with photoluminescence emission centered at 650 nm were used. I-V and light emission characteristics for typical light emitting transistors are presented.
Keywords :
elemental semiconductors; junction gate field effect transistors; light emitting devices; photoluminescence; semiconductor quantum dots; silicon; I-V characteristics; Si; conducting polymer matrix; junction field effect light emitting transistors; light emission characteristics; photoluminescence emission; silicon quantum dots; wavelength 650 nm; Active matrix organic light emitting diodes; Aluminum; Costs; Electrodes; Indium tin oxide; Nanoparticles; Plasma devices; Polymers; Quantum dots; Silicon;
Conference_Titel :
Group IV Photonics, 2008 5th IEEE International Conference on
Conference_Location :
Cardiff
Print_ISBN :
978-1-4244-1769-8
Electronic_ISBN :
978-1-4244-1768-1
DOI :
10.1109/GROUP4.2008.4638091
