Title :
Simultaneous achievement of high-quality oxide passivation of nc-Si and suppression of Er de-activation by silicon-rich silicon oxide / Er-doped silicon nitride multilayers
Author :
Yong Kim, In ; Shin, Jung H. ; Joon Kim, Kyung ; Yang, Moon-Seung ; Park, Yoondong
Author_Institution :
Dept. of Phys., Korea Adv. Inst. of Sci. & Technol. (KAIST), Daejeon
Abstract :
The effect of nc-Si/Er environment is investigated. We find that by using a silicon-rich silicon-oxide/SiN:Er multilayers, high quality nc-Si passivation and suppression of Er de-activation can be achieved simultaneously for optimal Er luminescence.
Keywords :
elemental semiconductors; luminescence; multilayers; passivation; silicon; Si; SiO2-SiN:Er; high-quality oxide passivation; luminescence; multilayers; Erbium; Luminescence; Nonhomogeneous media; Optical films; Optical materials; Optical pumping; Optical refraction; Optical sensors; Passivation; Silicon;
Conference_Titel :
Group IV Photonics, 2008 5th IEEE International Conference on
Conference_Location :
Cardiff
Print_ISBN :
978-1-4244-1769-8
Electronic_ISBN :
978-1-4244-1768-1
DOI :
10.1109/GROUP4.2008.4638094
