DocumentCode
3013754
Title
An accurate quasi-saturation BJT model for very-high-frequency analog/digital applications
Author
Fuse, T. ; Shuto, Y. ; Oowaki, Y.
Author_Institution
ULSI Res. Center, Toshiba Corp., Kawasaki, Japan
fYear
1995
fDate
8-10 June 1995
Firstpage
121
Lastpage
122
Abstract
An accurate quasi-saturation BJT model is proposed for very-high-frequency analog and digital applications. In modern low-power analog and digital circuits, the BJT often operates in a low collector voltage and high collector current region. Under such a quasi-saturation condition, base and collector resistances have nonlinear characteristics and the base pushout phenomenon occurs. However, these phenomena are not taken into the conventional small-signal model accurately, so that the collector current, the small-signal input impedance, and the small-signal current gain are overestimated under the quasi-saturation condition. We have developed linearized base and collector resistance models and the physically based base pushout model for accurate circuit simulations.
Keywords
bipolar analogue integrated circuits; bipolar digital integrated circuits; bipolar transistors; circuit analysis computing; equivalent circuits; integrated circuit design; semiconductor device models; base pushout phenomenon; base resistances; circuit simulations; collector resistances; high collector current; low collector voltage; nonlinear characteristics; quasi-saturation BJT model; quasi-saturation condition; small-signal current gain; small-signal input impedance; very-high-frequency analog/digital applications; Circuit simulation; Conductivity; Contact resistance; Equivalent circuits; Frequency; Impedance; Laboratories; Thermal resistance; Ultra large scale integration; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Circuits, 1995. Digest of Technical Papers., 1995 Symposium on
Conference_Location
Kyoto, Japan
Print_ISBN
0-7800-2599-0
Type
conf
DOI
10.1109/VLSIC.1995.520715
Filename
520715
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