Title :
Preparation for SiGe/Si heterogeneous nanostructures via a two-step approach strategy
Author :
Zhou, Bi ; Pan, Shuwan ; Chen, Songyan ; Li, Cheng ; Lai, Hongkai ; Yu, Jinzhong ; Zhu, Xianfang
Author_Institution :
Dept. of Phys., Xiamen Univ., Xiamen
Abstract :
SiGe/Si heterogeneous nanostructures were prepared by electrochemical anodization of SiGe/Si MQWs. Structural and optical properties of the materials were characterized. The origin of the photoluminescence from the heterogeneous nanostructures at room temperature is discussed.
Keywords :
Ge-Si alloys; X-ray diffraction; anodisation; electrochemical analysis; elemental semiconductors; nanostructured materials; photoluminescence; scanning electron microscopy; semiconductor growth; semiconductor materials; semiconductor quantum wells; silicon; SiGe-Si; double crystal X-ray diffraction; electrochemical anodization; heterogeneous nanostructures; multiple quantum wells; photoluminescence; scanning electron microscope; temperature 293 K to 298 K; two-step method; Elementary particle vacuum; Germanium silicon alloys; Nanocrystals; Nanostructured materials; Nanostructures; Optical films; Quantum well devices; Scanning electron microscopy; Semiconductor films; Silicon germanium;
Conference_Titel :
Group IV Photonics, 2008 5th IEEE International Conference on
Conference_Location :
Cardiff
Print_ISBN :
978-1-4244-1769-8
Electronic_ISBN :
978-1-4244-1768-1
DOI :
10.1109/GROUP4.2008.4638102
