• DocumentCode
    3013957
  • Title

    Metal-semiconductor-metal Ge photodetectors on SOI substrates for near infrared wavelength operation

  • Author

    Cheng Li ; Zhou, Zhiwen ; Cai, Zhimeng ; Lai, Hongkai ; Chen, Songyan

  • Author_Institution
    Dept. of Phys., Xiamen Univ., Xiamen
  • fYear
    2008
  • fDate
    17-19 Sept. 2008
  • Firstpage
    87
  • Lastpage
    89
  • Abstract
    Metal-semiconductor-metal Ge photodetectors on SOI substrates operating at 1.3-1.6 mum have been demonstrated. Ge films with thin top silicon layer for suppressing dark current were grown on low-temperature buffers by ultra-high vacuum chemical vapor deposition.
  • Keywords
    chemical vapour deposition; elemental semiconductors; germanium; metal-semiconductor-metal structures; photodetectors; Ge; near infrared wavelength operation; photodetectors; ultra-high vacuum chemical vapor deposition; wavelength 1.3 micron to 1.6 micron; Chemical vapor deposition; Dark current; Germanium silicon alloys; Photoconductivity; Photodetectors; Schottky barriers; Silicon germanium; Silicon on insulator technology; Substrates; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Group IV Photonics, 2008 5th IEEE International Conference on
  • Conference_Location
    Cardiff
  • Print_ISBN
    978-1-4244-1769-8
  • Electronic_ISBN
    978-1-4244-1768-1
  • Type

    conf

  • DOI
    10.1109/GROUP4.2008.4638106
  • Filename
    4638106
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3013957