• DocumentCode
    3014092
  • Title

    Influence of Si crystallization evolution on the Er luminescence in superlattices Er:Si /Al2O3

  • Author

    Wang, J.Z. ; Shi, Y. ; Shi, Z.Q. ; Tao, Z.S. ; Zhang, X.L. ; Pu, L. ; Ma, E. ; Zhang, R. ; Zheng, Y.D. ; Lu, F.

  • Author_Institution
    Dept. of Phys., Nanjing Univ., Nanjing
  • fYear
    2008
  • fDate
    17-19 Sept. 2008
  • Firstpage
    114
  • Lastpage
    115
  • Abstract
    Er:Si/Al2O3 superlattices are fabricated by pulsed laser deposition (PLD) technique. Photoluminescence (PL) and PL excitation spectra measurements are carried out. The annealing temperature dependent PL intensity curves are presented. The influence of Si crystallization on the Er ions luminescence shows that the thinner the Si layer, and the shorter the distance r, the better its sensitizing performance.
  • Keywords
    alumina; annealing; crystallisation; elemental semiconductors; erbium; photoluminescence; pulsed laser deposition; silicon; superlattices; Si:Er-Al2O3; annealing temperature; crystallization; intensity curves; photoluminescence excitation spectra; pulsed laser deposition; sensitizing performance; superlattices; Annealing; Crystallization; Erbium; Laser excitation; Luminescence; Optical pulses; Photoluminescence; Pulsed laser deposition; Superlattices; Temperature dependence;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Group IV Photonics, 2008 5th IEEE International Conference on
  • Conference_Location
    Cardiff
  • Print_ISBN
    978-1-4244-1769-8
  • Electronic_ISBN
    978-1-4244-1768-1
  • Type

    conf

  • DOI
    10.1109/GROUP4.2008.4638115
  • Filename
    4638115
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3014092