Title :
Comparision of InGaAs absorptive grating structures in 1.55 μm InGaAsP/InP strained MQW gain-coupled DFB lasers
Author :
Funabashi, Masaki ; Kawanishi, Hidekazu ; Sudoh, Tsurugi K. ; Nakura, Toru ; Schmitz, Dietmar ; Schulte, Frank ; Nakano, Yoshiaki ; Tada, Kunio
Author_Institution :
Dept. of Electron. Eng., Tokyo Univ., Japan
Abstract :
In gain-coupled (GC) distributed-feedback (DFB) lasers of absorptive grating type, the device characteristics depend very much on the absorptive grating configuration such as duty cycle, layer thickness, conduction type, and material composition. We have fabricated 1.55 μm InGaAsP/InP strained multiple quantum well (MQW) DFB lasers having different absorptive grating thickness and different conduction type. Lasing characteristics of these lasers were compared with regard to coupling coefficients and absorption saturation. Through net gain measurement, information useful for designing and optimizing the absorptive grating was obtained
Keywords :
III-V semiconductors; diffraction gratings; distributed feedback lasers; gallium arsenide; indium compounds; light absorption; quantum well lasers; 1.55 micrometre; III-V semiconductors; InGaAs; InGaAsP-InP-InGaAs; InGaAsP/InP; absorption saturation; absorptive grating structures; conduction type; coupling coefficients; duty cycle; lasing characteristics; layer thickness; material composition; net gain measurement; strained MQW gain-coupled DFB lasers; Absorption; Composite materials; Conducting materials; Gratings; Indium gallium arsenide; Indium phosphide; Optical coupling; Optical materials; Quantum well devices; Quantum well lasers;
Conference_Titel :
Indium Phosphide and Related Materials, 1997., International Conference on
Conference_Location :
Cape Cod, MA
Print_ISBN :
0-7803-3898-7
DOI :
10.1109/ICIPRM.1997.600132
