Title :
Design of quantum well thermoelectric energy harvester by CMOS process
Author :
Yang, S.M. ; Sheu, G.J.
Author_Institution :
Dept. of Aeronaut. & Astronaut., Nat. Cheng Kung Univ., Tainan, Taiwan
Abstract :
This work aims at improving the energy harvester performance by using low-dimensional thermoelectric materials. A micro-thermoelectric generator with quantum well thermocouples is developed by state-of-the-art CMOS (Complementary metal-oxide semiconductor) process. A relaxation-time model is applied to analyze the characteristic length of silicon germanium quantum well, and a thermal model is also applied to calculate the thermocouple size for optimal performance by matching the thermal/electrical resistance. Analysis based on TSMC 0.35μm 3P3M (3-poly and 3-metal layers) BiCMOS process shows that the quantum well thermocouples (0.05 μm Si0.9Ge0.1 quantum well on 0.300 μm P-thermoleg and 0.280 μm N-thermoleg) has the best performance. that the power factor and voltage factor is 0.241 μW/cm2K2 and 10.442 V/cm2K.
Keywords :
BiCMOS integrated circuits; CMOS integrated circuits; Ge-Si alloys; carrier relaxation time; energy harvesting; quantum well devices; semiconductor quantum wells; thermocouples; thermoelectric conversion; 3-metal layers; 3-poly layers; N-thermoleg; P-thermoleg; Si0.9Ge0.1; TSMC 3P3M BiCMOS process; complementary metal oxide semiconductor process; low-dimensional thermoelectric materials; microthermoelectric generator; power factor; quantum well thermocouples; relaxation time model; silicon germanium quantum well; size 0.05 mum; size 0.280 mum; size 0.300 mum; size 0.35 mum; thermal-electrical resistance; thermoelectric energy harvester; Conductivity; Generators; Silicon; Thermal conductivity; Thermal resistance; Wires; CMOS process; silicon germanium quantum well; thermoelectric generator; thermoelectric materials;
Conference_Titel :
Nanotechnology (IEEE-NANO), 2013 13th IEEE Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4799-0675-8
DOI :
10.1109/NANO.2013.6720796
