• DocumentCode
    3014160
  • Title

    Directly Pumped Silicon Lasing

  • Author

    Cloutier, Sylvain G. ; Hsu, Chih-Hsun ; Kossyrev, Pavel ; Rotem, Efi ; Shainline, Jeffrey ; Xu, Jimmy

  • Author_Institution
    Brown Univ., Providence
  • fYear
    2007
  • fDate
    6-11 May 2007
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Enhanced photoluminescence and 1.28 mum laser emission from nano-engineered silicon originating respectively from phonon k-selection rule breaking and point defect-mediated phononless recombination in an array of emissive structural deformation zones in a SOI wafer are reported.
  • Keywords
    electron-hole recombination; elemental semiconductors; photoluminescence; point defects; semiconductor lasers; silicon-on-insulator; SOI wafer; Si; directly pumped silicon lasing; emissive structural deformation zones; enhanced photoluminescence; laser emission; nano-engineered silicon; phonon k-selection rule breaking; point defect-mediated phononless recombination; wavelength 1.28 mum; Electrostatic discharge; Etching; Laser theory; Nanopatterning; Nanoporous materials; Photoluminescence; Semiconductor laser arrays; Silicon on insulator technology; Spectroscopy; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
  • Conference_Location
    Baltimore, MD
  • Print_ISBN
    978-1-55752-834-6
  • Type

    conf

  • DOI
    10.1109/CLEO.2007.4453115
  • Filename
    4453115
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3014160