DocumentCode :
3014185
Title :
Wavelength dependence of the ultrafast third-order nonlinearity of Silicon
Author :
Foster, Mark A. ; Gaeta, Alexander L.
Author_Institution :
Cornell Univ., Ithaca
fYear :
2007
fDate :
6-11 May 2007
Firstpage :
1
Lastpage :
2
Abstract :
We measure the wavelength dependence of the nonlinear index n2 and two-photon absorption coefficients of bulk silicon below the band edge. In contrast to direct-bandgap semiconductors, silicon shows a positive n2 throughout the band gap.
Keywords :
absorption coefficients; elemental semiconductors; high-speed optical techniques; nonlinear optics; silicon; Si; band gap; nonlinear index; two-photon absorption coefficients; ultrafast third-order nonlinearity; Integrated optics; Nonlinear optics; Optical pulses; Optical refraction; Probes; Pulse amplifiers; Pulse measurements; Silicon; Ultrafast optics; Wavelength measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-834-6
Type :
conf
DOI :
10.1109/CLEO.2007.4453117
Filename :
4453117
Link To Document :
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