• DocumentCode
    3014263
  • Title

    CMOS-Compatible High Frequency Infrared Photodiodes

  • Author

    Geis, M.W. ; Spector, S.J. ; Grein, M.E. ; Schulein, R.T. ; Yoon, J.U. ; Lennon, D.M. ; Deneault, S. ; Gan, F. ; Kårtner, F.X. ; Lyszczarz, T.M.

  • Author_Institution
    Massachusetts Inst. of Technol., Lexington
  • fYear
    2007
  • fDate
    6-11 May 2007
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    CMOS-compatible, silicon waveguide photodiodes, responding to radiation from 1270 to 1740 nm (0.8 A W-1 at 1550 nm) with a 3 dB bandwidth of 10 to 20 GHz were formed by Si ion implantation.
  • Keywords
    CMOS integrated circuits; elemental semiconductors; integrated optoelectronics; ion implantation; optical waveguides; photodiodes; silicon; CMOS-compatible high frequency infrared photodiodes; Si; frequency 10 GHz to 20 GHz; ion implantation; silicon waveguide photodiodes; wavelength 1270 nm to 1740 nm; Absorption; Annealing; Bandwidth; Frequency; Ion implantation; Optical waveguides; P-i-n diodes; Particle beam optics; Photodiodes; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
  • Conference_Location
    Baltimore, MD
  • Print_ISBN
    978-1-55752-834-6
  • Type

    conf

  • DOI
    10.1109/CLEO.2007.4453121
  • Filename
    4453121
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3014263