Title :
Fabrication method of silicon nanostructures by anisotropic etching
Author :
Han, Weihua ; Yang, Xiang ; Wang, Ying ; Yang, Fuhua ; Yu, Jinzhong
Author_Institution :
Inst. of Semicond., Chinese Acad. of Sci., Beijing
Abstract :
A fabrication method of silicon nanostructures is presented. Silicon nanowire, shift-line structure and islands have been successfully fabricated on SOI wafer using e-beam lithography and anisotropic etching technique.
Keywords :
electron beam lithography; elemental semiconductors; etching; island structure; nanowires; silicon; Si; anisotropic etching; e-beam lithography; island structure; nanostructures; nanowire; shift-line structure; Anisotropic magnetoresistance; Dry etching; Fabrication; Geometry; Lithography; Resists; Semiconductor nanostructures; Silicon on insulator technology; Substrates; Wet etching;
Conference_Titel :
Group IV Photonics, 2008 5th IEEE International Conference on
Conference_Location :
Cardiff
Print_ISBN :
978-1-4244-1769-8
Electronic_ISBN :
978-1-4244-1768-1
DOI :
10.1109/GROUP4.2008.4638126
