Title :
1.5 μm light emission from Er-doped low-x SiOx with widegap semiconductor carrier injection layers
Author :
Soneda, S. ; Minami, T. ; Ito, K. ; Kotake, A. ; Nakano, S. ; Naka, Y. ; Yamamoto, N. ; Tsuchiya, M. ; Nakamura, Y.
Author_Institution :
Grad. Sch. of Sci. & Technol., Kumamoto Univ., Kumamoto
Abstract :
We have observed room-temperature 1.5 mum-infrared electroluminescence from a silicon suboxide-based p-i-n heterostructure: n-SnO2/Er-doped SiOx/p-GaN. The n-SnO2 and p-GaN layers are introduced for efficient current-injection via their widegap semiconductor properties.
Keywords :
III-V semiconductors; electroluminescence; erbium; gallium compounds; semiconductor-insulator-semiconductor structures; silicon compounds; tin compounds; wide band gap semiconductors; Er doping; SnO2-GaN-SiOx:Er; current injection; infrared electroluminescence; light emission; n-SnO2 layer; p-GaN layer; silicon suboxide-based p-i-n heterostructure; temperature 293 K to 298 K; widegap semiconductor carrier injection layer; Electroluminescence; Erbium; Light sources; Microprocessors; Optical refraction; Optical variables control; Photonic band gap; Silicon; Substrates; Temperature;
Conference_Titel :
Group IV Photonics, 2008 5th IEEE International Conference on
Conference_Location :
Cardiff
Print_ISBN :
978-1-4244-1769-8
Electronic_ISBN :
978-1-4244-1768-1
DOI :
10.1109/GROUP4.2008.4638127
