Title :
Intense green light emission from low temperature grown SiNO complex system
Author :
Dong, Hengping ; Huang, Rui ; Wang, Danqing ; Chen, Kunji ; Li, Wei ; Ma, Zhongyuan ; Xu, Jun ; Huang, Xinfan
Author_Institution :
State Key Lab. of Solid State Microstructures, Nanjing Univ., Nanjing
Abstract :
We report intense green photoluminescence from amorphous oxidized silicon nitride film (a-SiN:O). A-SiN:O light-emitting devices of green-yellow color are successfully fabricated. Notably, EL efficiency can be significantly enhanced by modulating Si/N ratio in luminescent active layer.
Keywords :
electroluminescence; light emitting devices; oxygen; photoluminescence; silicon compounds; SiN:O; amorphous oxidized silicon nitride film; electroluminescence; green-yellow color; intense green light emission; intense green photoluminescence; light-emitting devices; luminescent active layer; modulating ratio; Charge carrier processes; Current density; Lamps; Nanocrystals; Oxidation; Plasma devices; Plasma temperature; Radiative recombination; Semiconductor films; Silicon;
Conference_Titel :
Group IV Photonics, 2008 5th IEEE International Conference on
Conference_Location :
Cardiff
Print_ISBN :
978-1-4244-1769-8
Electronic_ISBN :
978-1-4244-1768-1
DOI :
10.1109/GROUP4.2008.4638130
