Title :
High speed Ge photodetector integrated on silicon-on-insulator operating at very low bias voltage
Author :
Osmond, Johann ; Isella, Giovanni ; Chrastina, Daniel ; Kaufmann, Rolf ; Von Känel, Hans
Author_Institution :
CNISM & L-NESS, Politec. di Milano, Como
Abstract :
Experimental results of Ge/Si heterojunction photodetectors of 2 GHz bandwidth operating at very low bias voltage and fabricated from epitaxial Ge grown on Si and SOI substrates by low-energy plasma-enhanced CVD are reported.
Keywords :
CMOS integrated circuits; elemental semiconductors; germanium; integrated optoelectronics; photodetectors; semiconductor epitaxial layers; semiconductor heterojunctions; silicon; silicon-on-insulator; CMOS integration; Ge-Si; SOI substrate; Si; epitaxial germanium; heterojunction photodetector; high speed germanium photodetector; low-energy plasma-enhanced CVD; monolithically integration; silicon-on-insulator integration; Bandwidth; Chemical vapor deposition; Diodes; Low voltage; Photodetectors; Plasma applications; Plasma chemistry; Plasma temperature; Silicon on insulator technology; Substrates; chemical vapour deposition; germanium; optoelectronic devices; p-i-n diodes; photodetectors; silicon; silicon-on-insulator (SOI) technology;
Conference_Titel :
Group IV Photonics, 2008 5th IEEE International Conference on
Conference_Location :
Cardiff
Print_ISBN :
978-1-4244-1769-8
Electronic_ISBN :
978-1-4244-1768-1
DOI :
10.1109/GROUP4.2008.4638132
