Fully-integrated LC VCOs at RF on silicon

Author

Dülger, Fikret ; Sánchez-Sinencio, Edgar

Author_Institution

Dept. of Electr. Eng., Texas A&M Univ., College Station, TX, USA

fYear

2001

fDate

2001

Firstpage

13

Lastpage

18

Abstract

Fully integrated negative conductance voltage controlled oscillator (VCO) design examples at GHz frequencies in Si BiCMOS and CMOS technologies are provided. The advantages and shortcomings of the structures are briefly presented together with the associated design trade-offs. Phase noise of a CMOS VCO is calculated based on the Linear Time-Variant Impulse Sensitivity Function (ISF) theory and compared to the simulations. Experimental results of two fully integrated CMOS VCOs designed with 0.5 μm and 0.35 μm CMOS technologies at 2.2 GHz are given

Keywords

MMIC oscillators; UHF integrated circuits; UHF oscillators; elemental semiconductors; integrated circuit design; phase noise; silicon; transient response; voltage-controlled oscillators; 0.35 micron; 0.5 micron; 2.2 GHz; CMOS; LC VCOs; Si; design trade-offs; linear time-variant impulse sensitivity function; negative conductance voltage controlled oscillator; phase noise; Bandwidth; BiCMOS integrated circuits; CMOS technology; Communication systems; Frequency conversion; Frequency synthesizers; Phase locked loops; Phase noise; Silicon; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Mixed-Signal Design, 2001. SSMSD. 2001 Southwest Symposium on

Conference_Location

Austin, TX

Print_ISBN

0-7803-6742-1

Type

conf

DOI

10.1109/SSMSD.2001.914929

Filename

914929