Title :
Fully-integrated LC VCOs at RF on silicon
Author :
Dülger, Fikret ; Sánchez-Sinencio, Edgar
Author_Institution :
Dept. of Electr. Eng., Texas A&M Univ., College Station, TX, USA
Abstract :
Fully integrated negative conductance voltage controlled oscillator (VCO) design examples at GHz frequencies in Si BiCMOS and CMOS technologies are provided. The advantages and shortcomings of the structures are briefly presented together with the associated design trade-offs. Phase noise of a CMOS VCO is calculated based on the Linear Time-Variant Impulse Sensitivity Function (ISF) theory and compared to the simulations. Experimental results of two fully integrated CMOS VCOs designed with 0.5 μm and 0.35 μm CMOS technologies at 2.2 GHz are given
Keywords :
MMIC oscillators; UHF integrated circuits; UHF oscillators; elemental semiconductors; integrated circuit design; phase noise; silicon; transient response; voltage-controlled oscillators; 0.35 micron; 0.5 micron; 2.2 GHz; CMOS; LC VCOs; Si; design trade-offs; linear time-variant impulse sensitivity function; negative conductance voltage controlled oscillator; phase noise; Bandwidth; BiCMOS integrated circuits; CMOS technology; Communication systems; Frequency conversion; Frequency synthesizers; Phase locked loops; Phase noise; Silicon; Voltage-controlled oscillators;
Conference_Titel :
Mixed-Signal Design, 2001. SSMSD. 2001 Southwest Symposium on
Conference_Location :
Austin, TX
Print_ISBN :
0-7803-6742-1
DOI :
10.1109/SSMSD.2001.914929
