• DocumentCode
    3014510
  • Title

    Low dark-current Ge photodiodes on Si with intrinsic-Si-layer insertion

  • Author

    Park, Sungbong ; Takita, Shinya ; Ishikawa, Yasuhiko ; Osaka, Jiro ; Wada, Kazumi

  • Author_Institution
    Dept. of Mater. Eng., Tokyo Univ., Tokyo
  • fYear
    2008
  • fDate
    17-19 Sept. 2008
  • Firstpage
    179
  • Lastpage
    181
  • Abstract
    We demonstrated as-grown Ge p-i-n photodiode on Si with low dark current (~10 mA/cm2) and comparable responsivity. Such a low temperature fabrication is crucial to realize ldquobackendrdquo process for Ge integration in Si photonics.
  • Keywords
    dark conductivity; elemental semiconductors; germanium; integrated optics; p-i-n photodiodes; semiconductor epitaxial layers; silicon; Ge-Si; Si photonics integration; backend process; dark current; intrinsic silicon layer insertion; p-i-n photodiode; Annealing; Dark current; Electrodes; Equations; Etching; Fabrication; Optical interconnections; PIN photodiodes; Photonics; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Group IV Photonics, 2008 5th IEEE International Conference on
  • Conference_Location
    Cardiff
  • Print_ISBN
    978-1-4244-1769-8
  • Electronic_ISBN
    978-1-4244-1768-1
  • Type

    conf

  • DOI
    10.1109/GROUP4.2008.4638137
  • Filename
    4638137
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3014510