DocumentCode
3014563
Title
Ge on Si p-i-n photodetectors with 40 GHz bandwidth
Author
Klinger, S. ; Vogel, W. ; Berroth, M. ; Kaschel, M. ; Oehme, M. ; Kasper, E.
Author_Institution
Inst. of Electr. & Opt. Commun. Eng., Univ. Stuttgart, Stuttgart
fYear
2008
fDate
17-19 Sept. 2008
Firstpage
188
Lastpage
190
Abstract
Germanium photodiodes grown on a silicon substrate are characterized for various diameters and thicknesses of the active absorption region. High frequency measurements using a vector network analyzer are reported for frequencies up to 45 GHz showing a record bandwidth of 40 GHz.
Keywords
elemental semiconductors; germanium; p-i-n photodiodes; photodetectors; Ge; Si; frequency 45 GHz; germanium photodiode; p-i-n photodetector; silicon substrate; vector network analyzer; Absorption; Bandwidth; Etching; Optical fiber communication; PIN photodiodes; Photodetectors; Scattering parameters; Silicon; Space charge; Voltage; Ge on Si photodiodes; Integrated optical receivers; telecommunications;
fLanguage
English
Publisher
ieee
Conference_Titel
Group IV Photonics, 2008 5th IEEE International Conference on
Conference_Location
Cardiff
Print_ISBN
978-1-4244-1769-8
Electronic_ISBN
978-1-4244-1768-1
Type
conf
DOI
10.1109/GROUP4.2008.4638140
Filename
4638140
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