Silicon integrated nanophotonics for on-chip optical interconnects

As multi-core microprocessor architectures continue to evolve as a promising platform for high-performance computing, an additional set of challenges emerges for the global interconnects between distant cores. In particular, the limited throughput and large power consumption of electrical copper interconnects are becoming dominant factors limiting the continued scaling of processor performance. One promising solution is to complement conventional global interconnects with a CMOS-compatible intra-chip optical network, based on silicon-on-insulator (SOI) photonic integrated circuits. We will review recent results on silicon nanophotonic circuits based on SOI photonic wires and photonic crystals. Silicon nanophotonic devices have immense capacity for low-loss, high-bandwidth data transmission, and can confine light within sub-micron dimensions, enabling the design of ultra-compact optical devices for all necessary functions within such optical networks. While the bandwidth and power consumption advantages of SOI optical interconnects are potentially immense, ensuring the performance of chip-scale networks places stringent requirements upon the control of the manufacturing process, and its influence upon the operation of individual optical components. We will present recent work on the design, fabrication, and demonstration of various passive and electrooptic devices required for high speed optical interconnect applications, including high-order WDM optical filters, modulators, and switches.