• DocumentCode
    3014888
  • Title

    10Gbit/s 2mW inductorless transimpedance amplifier

  • Author

    Atef, Mohamed ; Zimmermann, Horst

  • Author_Institution
    Vienna University of Technology, Institute of Electrodynamics Microwave and Circuit Engineering, Gusshausstrasse 25 / 354, 1040, Austria
  • fYear
    2012
  • fDate
    20-23 May 2012
  • Firstpage
    1728
  • Lastpage
    1731
  • Abstract
    This work presents the design and performance of a 10Gbit/s transimpedance amplifier (TIA) implemented in a 40nm CMOS technology. The introduced TIA uses an inverter with active common-drain feedback (ICDF-TIA). The TIA is followed by a two-stage differential amplifier and a 50Ω differential output driver to provide an interface to the measurement setup. The optical receiver shows an optical sensitivity of −19dBm for a BER= 10−12. The transimpedance amplifier achieves a transimpedance gain of 47dBΩ, 8GHz bandwidth with 0.45pF total input capacitance for the photodiode, ESD protection and input PAD. The TIA occupies 0.0002mm2 whereas the complete optical receiver occupies a chip area of 0.16mm2. The power consumption of the TIA is only 2mW and the complete chip dissipates 16mW for a 1.1V single supply voltage. The complete optical receiver has a 58dBΩ transimpedance gain and 7GHz bandwidth.
  • Keywords
    Bandwidth; CMOS integrated circuits; Impedance; Inverters; Noise; Optical receivers; Power demand;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems (ISCAS), 2012 IEEE International Symposium on
  • Conference_Location
    Seoul, Korea (South)
  • ISSN
    0271-4302
  • Print_ISBN
    978-1-4673-0218-0
  • Type

    conf

  • DOI
    10.1109/ISCAS.2012.6271595
  • Filename
    6271595