DocumentCode
3014888
Title
10Gbit/s 2mW inductorless transimpedance amplifier
Author
Atef, Mohamed ; Zimmermann, Horst
Author_Institution
Vienna University of Technology, Institute of Electrodynamics Microwave and Circuit Engineering, Gusshausstrasse 25 / 354, 1040, Austria
fYear
2012
fDate
20-23 May 2012
Firstpage
1728
Lastpage
1731
Abstract
This work presents the design and performance of a 10Gbit/s transimpedance amplifier (TIA) implemented in a 40nm CMOS technology. The introduced TIA uses an inverter with active common-drain feedback (ICDF-TIA). The TIA is followed by a two-stage differential amplifier and a 50Ω differential output driver to provide an interface to the measurement setup. The optical receiver shows an optical sensitivity of −19dBm for a BER= 10−12. The transimpedance amplifier achieves a transimpedance gain of 47dBΩ, 8GHz bandwidth with 0.45pF total input capacitance for the photodiode, ESD protection and input PAD. The TIA occupies 0.0002mm2 whereas the complete optical receiver occupies a chip area of 0.16mm2. The power consumption of the TIA is only 2mW and the complete chip dissipates 16mW for a 1.1V single supply voltage. The complete optical receiver has a 58dBΩ transimpedance gain and 7GHz bandwidth.
Keywords
Bandwidth; CMOS integrated circuits; Impedance; Inverters; Noise; Optical receivers; Power demand;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems (ISCAS), 2012 IEEE International Symposium on
Conference_Location
Seoul, Korea (South)
ISSN
0271-4302
Print_ISBN
978-1-4673-0218-0
Type
conf
DOI
10.1109/ISCAS.2012.6271595
Filename
6271595
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