GaInP/GaAs monolithic tandem concentrator cells

Author

Friedman, D.J. ; Kurtz, Sarah R. ; Bertness, K.A. ; Kibbler, A.E. ; Kramer, C. ; Olson, J.M. ; King, D.L. ; Hansen, B.R. ; Snyder, J.K.

Author_Institution

Nat. Renewable Energy Lab., Golden, CO, USA

Volume

2

fYear

1994

fDate

5-9 Dec 1994

Firstpage

1829

Abstract

This paper discusses design considerations for the GaInP/GaAs monolithic tandem concentrator cell. The prototype device achieves a peak efficiency of 30.2% in a range of 140-180 suns, making this the first two-terminal device to demonstrate a verified efficiency exceeding 30%. At 425 suns the efficiency is still above 29%. We focus on the issues of grid design, top-cell thickness, and antireflectance coat. We also examine ways in which these aspects of the device may be modified to provide further performance improvements for future devices

Keywords

III-V semiconductors; antireflection coatings; gallium arsenide; indium compounds; optical films; solar cells; solar energy concentrators; 140-180 suns; 30.2 percent; 425 suns efficiency; GaInP-GaAs; GaInP/GaAs monolithic tandem concentrator cells; antireflectance coat; grid design; peak efficiency; performance improvements; top-cell thickness; two-terminal device; Conductivity; Etching; Fabrication; Fingers; Gallium arsenide; Gold; Metallization; Substrates; Sun; Surface resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on

Conference_Location

Waikoloa, HI

Print_ISBN

0-7803-1460-3

Type

conf

DOI

10.1109/WCPEC.1994.520721

Filename

520721