DocumentCode
3015031
Title
The power conversion efficiency of visible light emitting devices in standard BiCMOS processes
Author
Kuindersma, P.I. ; Hoang, T. ; Schmitz, J. ; Vijayaraghavan, M.N. ; Dijkstra, M. ; van Noort, W. ; Vanhoucke, T. ; Peters, W.C.M. ; Kramer, M. C J C M
Author_Institution
NXP-TSMC Res. Center, Leuven
fYear
2008
fDate
17-19 Sept. 2008
Firstpage
256
Lastpage
258
Abstract
We present experimental and theoretical proof for a single and unique relationship between the breakdown voltage and power efficiency of visible light emitting devices fabricated in standard BiCMOS processes.
Keywords
BiCMOS integrated circuits; light emitting devices; BiCMOS processes; breakdown voltage; electrically stimulated light emission; power conversion efficiency; visible light emitting devices; BiCMOS integrated circuits; Biomedical optical imaging; Nonlinear optics; Optical devices; Optical receivers; Optical sensors; Power conversion; Power generation; Silicon; Stimulated emission;
fLanguage
English
Publisher
ieee
Conference_Titel
Group IV Photonics, 2008 5th IEEE International Conference on
Conference_Location
Cardiff, Wales
Print_ISBN
978-1-4244-1769-8
Electronic_ISBN
978-1-4244-1768-1
Type
conf
DOI
10.1109/GROUP4.2008.4638164
Filename
4638164
Link To Document