Title :
GaAs MMIC technology for IT and wireless communications
Author :
Marsh, S.P. ; Long, A.P. ; Edwards, G.D. ; Buck, B.J. ; Peniket, N.A. ; Geen, M.W. ; Wadsworth, S.D.
Author_Institution :
GEC-Marconi Mater. Technol. Ltd., Towcester, UK
Abstract :
The market for information technology and wireless communication systems is growing rapidly to meet the increasing demand for greater capacity on existing networks and new systems with greater bandwidth. Access points to these networks are moving closer to individual desks and homes, driving up the volumes, and driving down the prices, of the required components. GaAs MMIC technology is ideally placed to meet these requirements, bringing with it small size and weight, low cost and inherent reproducibility. The MESFET, HEMT and HBT MMIC processes at GMMT have produced ASICs for commercial products in such systems, and are available as foundry services for external customers to design their own ASIC chips
Keywords :
HEMT integrated circuits; III-V semiconductors; MESFET integrated circuits; application specific integrated circuits; bipolar MMIC; field effect MMIC; gallium arsenide; heterojunction bipolar transistors; ASIC chip design; GaAs; GaAs MMIC technology; HBT MMIC processes; HEMT MMIC processes; IT applications; MESFET MMIC processes; foundry services; information technology; network access points; network capacity; reproducibility; wireless communication systems; wireless communications; Bandwidth; Costs; Gallium arsenide; HEMTs; Heterojunction bipolar transistors; Information technology; MESFETs; MMICs; Reproducibility of results; Wireless communication;
Conference_Titel :
Semiconductor Electronics, 1998. Proceedings. ICSE '98. 1998 IEEE International Conference on
Conference_Location :
Bangi
Print_ISBN :
0-7803-4971-7
DOI :
10.1109/SMELEC.1998.781138
