• DocumentCode
    3015168
  • Title

    Design of GeSiSn/Ge quantum cascase laser

  • Author

    Sun, G. ; Khurgin, J.B. ; Menéndez, J. ; Soref, R.A.

  • Author_Institution
    Dept. of Phys., Massachusetts Univ., Boston, MA
  • fYear
    2008
  • fDate
    17-19 Sept. 2008
  • Firstpage
    273
  • Lastpage
    275
  • Abstract
    We design a lattice-matched Ge/Ge0.76Si0.19Sn0.05 quantum cascade laser emitting at 49 mum. This particular alloy composition gives a ldquocleanrdquo conduction band offset of 150 meV at L-valleys with all other energy valleys sitting higher in energy.
  • Keywords
    Ge-Si alloys; conduction bands; elemental semiconductors; germanium; quantum cascade lasers; semiconductor heterojunctions; tin alloys; GeSiSn-Ge; L-valleys; conduction band offset; lattice-matched quantum cascade laser; quantum cascade laser; Acoustic scattering; Germanium silicon alloys; III-V semiconductor materials; Laser transitions; Optical design; Optical materials; Optical scattering; Photonic band gap; Quantum cascade lasers; Silicon germanium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Group IV Photonics, 2008 5th IEEE International Conference on
  • Conference_Location
    Cardiff
  • Print_ISBN
    978-1-4244-1769-8
  • Electronic_ISBN
    978-1-4244-1768-1
  • Type

    conf

  • DOI
    10.1109/GROUP4.2008.4638170
  • Filename
    4638170
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3015168