Modelling of threshold voltage with non-uniform substrate doping [MOSFET]

Author

Lim, K.Y. ; Zhou, X.

Author_Institution

Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore

fYear

1998

fDate

1998

Firstpage

27

Lastpage

31

Abstract

A simple analytical threshold voltage equation for modelling nonuniform MOSFET channel doping is derived, which takes the peak doping concentration and peak location as inputs with a single process-dependent fitting parameter. The model has been verified with extensive numerical simulation results and can be applied to real devices for a wide range of nonuniform doping profiles with a simple, empirical parameter extraction

Keywords

MOSFET; doping profiles; numerical analysis; semiconductor device models; MOSFET; analytical threshold voltage equation; empirical parameter extraction; nonuniform MOSFET channel doping modelling; nonuniform doping profiles; nonuniform substrate doping; numerical simulation; peak doping concentration; peak doping location; process-dependent fitting parameter; threshold voltage modelling; Analytical models; Annealing; Doping profiles; Equations; MOSFETs; Medical simulation; Numerical simulation; Parameter extraction; Semiconductor process modeling; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Electronics, 1998. Proceedings. ICSE '98. 1998 IEEE International Conference on

Conference_Location

Bangi

Print_ISBN

0-7803-4971-7

Type

conf

DOI

10.1109/SMELEC.1998.781144

Filename

781144