Title :
Simulation of charge pumping current in hot-carrier degraded p-MOSFET´s
Author :
Samudra, G.S. ; Yip, Anselm ; See, L.K.
Author_Institution :
Dept. of Electr. Eng., Nat. Univ. of Singapore, Singapore
Abstract :
Charge pumping is a widely used method of evaluating the Si-SiO 2 interfaces in MOSFETs. The modelling of this technique in a p-MOSFET using two-dimensional device simulator is presented. A two-dimensional transient model which accounts for the interface-state dynamics is employed to simulate the charge pumping in MOSFETs with good accuracy. The simulation results are substantiated by measurement results
Keywords :
MOSFET; hot carriers; interface states; semiconductor device measurement; semiconductor device models; semiconductor device reliability; transient analysis; 2D device simulator; 2D transient model; MOSFET Si-SiO2 interfaces; MOSFETs; Si-SiO2; charge pumping; charge pumping current; hot-carrier degraded p-MOSFETs; interface-state dynamics; measurement; modelling; p-MOSFET; simulation; Analytical models; Charge measurement; Charge pumps; Current measurement; Degradation; Electron traps; Frequency; Hot carriers; MOSFET circuits; Numerical models;
Conference_Titel :
Semiconductor Electronics, 1998. Proceedings. ICSE '98. 1998 IEEE International Conference on
Conference_Location :
Bangi
Print_ISBN :
0-7803-4971-7
DOI :
10.1109/SMELEC.1998.781145
