DocumentCode
3015285
Title
Modeling and characterization of threshold shift and capacitance peaking in AlGaN/GaN MOSHFETs
Author
Deng, Jie ; Hwang, James C M
Author_Institution
Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA, USA
fYear
2009
fDate
20-21 April 2009
Firstpage
1
Lastpage
4
Abstract
Mobility enhancement unique to AlGaN/GaN MOSHFETs was characterized under CW and pulse conditions and at different temperatures. The physical insight obtained was used to guide the modification of the Angelov model to account for threshold shift with temperature and capacitance peaking near pinch off. This modified Angelov model can accurately simulate the power, gain, efficiency, drain current, and gate current of a Class-A amplifier over a wide range of input power and ambient temperature.
Keywords
III-V semiconductors; MOSFET; aluminium compounds; gallium compounds; high electron mobility transistors; semiconductor device models; wide band gap semiconductors; AlGaN-GaN; MOSHFET modeling; capacitance peaking; class-A amplifier; mobility enhancement; modified Angelov model; threshold shift; Aluminum gallium nitride; Capacitance; Gallium nitride; MOSHFETs;
fLanguage
English
Publisher
ieee
Conference_Titel
Wireless and Microwave Technology Conference, 2009. WAMICON '09. IEEE 10th Annual
Conference_Location
Clearwater, FL
Print_ISBN
978-1-4244-4564-6
Electronic_ISBN
978-1-4244-4565-3
Type
conf
DOI
10.1109/WAMICON.2009.5207228
Filename
5207228
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