Title :
Modeling and characterization of threshold shift and capacitance peaking in AlGaN/GaN MOSHFETs
Author :
Deng, Jie ; Hwang, James C M
Author_Institution :
Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA, USA
Abstract :
Mobility enhancement unique to AlGaN/GaN MOSHFETs was characterized under CW and pulse conditions and at different temperatures. The physical insight obtained was used to guide the modification of the Angelov model to account for threshold shift with temperature and capacitance peaking near pinch off. This modified Angelov model can accurately simulate the power, gain, efficiency, drain current, and gate current of a Class-A amplifier over a wide range of input power and ambient temperature.
Keywords :
III-V semiconductors; MOSFET; aluminium compounds; gallium compounds; high electron mobility transistors; semiconductor device models; wide band gap semiconductors; AlGaN-GaN; MOSHFET modeling; capacitance peaking; class-A amplifier; mobility enhancement; modified Angelov model; threshold shift; Aluminum gallium nitride; Capacitance; Gallium nitride; MOSHFETs;
Conference_Titel :
Wireless and Microwave Technology Conference, 2009. WAMICON '09. IEEE 10th Annual
Conference_Location :
Clearwater, FL
Print_ISBN :
978-1-4244-4564-6
Electronic_ISBN :
978-1-4244-4565-3
DOI :
10.1109/WAMICON.2009.5207228
