Title :
Ultrafast optical response of InAs quantum dots for photoconductive applications
Author :
Sengupta, A. ; Upadhya, P.C. ; Lachab, M. ; Fan, W.H. ; Cunningham, J.E. ; Davies, A.G. ; Linfield, E.H. ; Missous, M.
Author_Institution :
Univ. of Leeds, Leeds
Abstract :
Optical pump-probe measurements have been performed on superlattices of self-organised InAs quantum dots embedded in GaAs. These structures exhibit subpicosecond photocarrier lifetimes when excited at 800 nm, which increase with the ex situ annealing temperature.
Keywords :
III-V semiconductors; annealing; carrier lifetime; gallium arsenide; high-speed optical techniques; indium compounds; self-assembly; semiconductor quantum dots; semiconductor superlattices; InAs-GaAs; annealing; optical pump-probe measurements; photoconductive applications; self-organised quantum dots; subpicosecond photocarrier lifetimes; superlattices; ultrafast optical response; wavelength 800 nm; Annealing; Biomedical optical imaging; Gallium arsenide; Optical pumping; Optical superlattices; Photoconducting materials; Photoconductivity; Quantum dots; Temperature; Ultrafast optics;
Conference_Titel :
Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-834-6
DOI :
10.1109/CLEO.2007.4453179
