DocumentCode
3015348
Title
Ultrafast optical response of InAs quantum dots for photoconductive applications
Author
Sengupta, A. ; Upadhya, P.C. ; Lachab, M. ; Fan, W.H. ; Cunningham, J.E. ; Davies, A.G. ; Linfield, E.H. ; Missous, M.
Author_Institution
Univ. of Leeds, Leeds
fYear
2007
fDate
6-11 May 2007
Firstpage
1
Lastpage
2
Abstract
Optical pump-probe measurements have been performed on superlattices of self-organised InAs quantum dots embedded in GaAs. These structures exhibit subpicosecond photocarrier lifetimes when excited at 800 nm, which increase with the ex situ annealing temperature.
Keywords
III-V semiconductors; annealing; carrier lifetime; gallium arsenide; high-speed optical techniques; indium compounds; self-assembly; semiconductor quantum dots; semiconductor superlattices; InAs-GaAs; annealing; optical pump-probe measurements; photoconductive applications; self-organised quantum dots; subpicosecond photocarrier lifetimes; superlattices; ultrafast optical response; wavelength 800 nm; Annealing; Biomedical optical imaging; Gallium arsenide; Optical pumping; Optical superlattices; Photoconducting materials; Photoconductivity; Quantum dots; Temperature; Ultrafast optics;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
Conference_Location
Baltimore, MD
Print_ISBN
978-1-55752-834-6
Type
conf
DOI
10.1109/CLEO.2007.4453179
Filename
4453179
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