Rapid thermal MOCVD of InGaAs/InP multilayers

Author

Kreinin, O. ; Bahir, G.

Author_Institution

Dept. of Electr. Eng., Technion-Israel Inst. of Technol., Haifa, Israel

fYear

1997

fDate

11-15 May 1997

Firstpage

308

Lastpage

311

Abstract

High quality InGaAs/InP multilayers have been grown by means of rapid thermal low pressure metalorganic chemical vapor deposition (RT-LPMOCVD), using tertiarybutylphosphine (TBP) as phosphorous source and tertiarybutylarsine (TBA) as arsenic source. The undoped featureless films exhibited an excellent morphology with a narrow X-ray peak of 30 arcsec for InGaAs layer on RT-LPMOCVD grown InP, reflecting a lattice mismatch of 0.02%. A test structure of three quantum well lattice matched InGaAs/InP structure (≈50 Å width of each layer) were grown following determination of the optimum growth parameters for InGaAs and InP layers

Keywords

III-V semiconductors; gallium arsenide; indium compounds; rapid thermal processing; semiconductor epitaxial layers; semiconductor growth; semiconductor quantum wells; vapour phase epitaxial growth; 50 angstrom; III-V semiconductors; InGaAs-InP; growth parameters; lattice mismatch; quantum wells; rapid thermal MOCVD; tertiarybutylarsine; tertiarybutylphosphine; Communication switching; Communication system control; Gallium arsenide; Indium gallium arsenide; Indium phosphide; Lamps; MOCVD; Nonhomogeneous media; Substrates; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1997., International Conference on

Conference_Location

Cape Cod, MA

ISSN

1092-8669

Print_ISBN

0-7803-3898-7

Type

conf

DOI

10.1109/ICIPRM.1997.600138

Filename

600138