Title :
Rapid thermal MOCVD of InGaAs/InP multilayers
Author :
Kreinin, O. ; Bahir, G.
Author_Institution :
Dept. of Electr. Eng., Technion-Israel Inst. of Technol., Haifa, Israel
Abstract :
High quality InGaAs/InP multilayers have been grown by means of rapid thermal low pressure metalorganic chemical vapor deposition (RT-LPMOCVD), using tertiarybutylphosphine (TBP) as phosphorous source and tertiarybutylarsine (TBA) as arsenic source. The undoped featureless films exhibited an excellent morphology with a narrow X-ray peak of 30 arcsec for InGaAs layer on RT-LPMOCVD grown InP, reflecting a lattice mismatch of 0.02%. A test structure of three quantum well lattice matched InGaAs/InP structure (≈50 Å width of each layer) were grown following determination of the optimum growth parameters for InGaAs and InP layers
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; rapid thermal processing; semiconductor epitaxial layers; semiconductor growth; semiconductor quantum wells; vapour phase epitaxial growth; 50 angstrom; III-V semiconductors; InGaAs-InP; growth parameters; lattice mismatch; quantum wells; rapid thermal MOCVD; tertiarybutylarsine; tertiarybutylphosphine; Communication switching; Communication system control; Gallium arsenide; Indium gallium arsenide; Indium phosphide; Lamps; MOCVD; Nonhomogeneous media; Substrates; Temperature;
Conference_Titel :
Indium Phosphide and Related Materials, 1997., International Conference on
Conference_Location :
Cape Cod, MA
Print_ISBN :
0-7803-3898-7
DOI :
10.1109/ICIPRM.1997.600138
