DocumentCode :
3015434
Title :
Optoelectronic effect of high-pressure water vapor annealing for nanocrystalline silicon films prepared by ion implantation
Author :
Gelloz, B. ; Takeuchi, A. ; Koshida, N.
Author_Institution :
Grad. Sch. of Eng., Tokyo Univ. of Agric. & Technol., Koganei
fYear :
2008
fDate :
17-19 Sept. 2008
Firstpage :
317
Lastpage :
319
Abstract :
Nanocrystalline Si quantum dots were introduced in SiO2 and Si3N4 layers by ion implantation followed by annealing. Their optoelectronic characteristics were much improved by a significant reduction of defects as in the case of nanocrystalline materials prepared by wet processing.
Keywords :
annealing; electroluminescence; elemental semiconductors; ion implantation; nanostructured materials; optoelectronic devices; photoluminescence; semiconductor quantum dots; semiconductor thin films; silicon; Si; high-pressure water vapor annealing; ion implantation; nanocrystalline silicon films; optoelectronic effect; quantum dots; wet processing; Agricultural engineering; Agriculture; Annealing; Indium tin oxide; Ion implantation; Nanostructured materials; Quantum dots; Semiconductor films; Silicon; Sputtering;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Group IV Photonics, 2008 5th IEEE International Conference on
Conference_Location :
Cardiff
Print_ISBN :
978-1-4244-1769-8
Electronic_ISBN :
978-1-4244-1768-1
Type :
conf
DOI :
10.1109/GROUP4.2008.4638185
Filename :
4638185
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3015434
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