Title :
A non-linear description of the bias dependent parasitic resistances of quarter micron MOSFETs
Author :
Gondro, Elmar ; Klein, Peter ; Schuler, Franz ; Kowarik, Oskar
Author_Institution :
Inst. of Electron., Bundeswehr Univ., Neubiberg, Germany
Abstract :
A new model description for source and drain resistances of LDD devices is proposed. It includes the dependence on the gate, bulk and drain bias. Measurements on a 0.25 μm gate length device show excellent agreement with circuit simulation
Keywords :
MOSFET; circuit simulation; doping profiles; electric resistance; semiconductor device measurement; semiconductor device models; LDD devices; MOSFETs; bias dependent parasitic resistances; bulk bias; circuit simulation; device measurements; drain bias; drain resistance; gate bias; gate length; model description; nonlinear model description; source resistance; Art; Circuit simulation; Doping; Electrical resistance measurement; Human computer interaction; Length measurement; MOSFETs; Resistors; Virtual colonoscopy; Voltage;
Conference_Titel :
Semiconductor Electronics, 1998. Proceedings. ICSE '98. 1998 IEEE International Conference on
Conference_Location :
Bangi
Print_ISBN :
0-7803-4971-7
DOI :
10.1109/SMELEC.1998.781157
