DocumentCode
3015438
Title
A non-linear description of the bias dependent parasitic resistances of quarter micron MOSFETs
Author
Gondro, Elmar ; Klein, Peter ; Schuler, Franz ; Kowarik, Oskar
Author_Institution
Inst. of Electron., Bundeswehr Univ., Neubiberg, Germany
fYear
1998
fDate
1998
Firstpage
97
Lastpage
99
Abstract
A new model description for source and drain resistances of LDD devices is proposed. It includes the dependence on the gate, bulk and drain bias. Measurements on a 0.25 μm gate length device show excellent agreement with circuit simulation
Keywords
MOSFET; circuit simulation; doping profiles; electric resistance; semiconductor device measurement; semiconductor device models; LDD devices; MOSFETs; bias dependent parasitic resistances; bulk bias; circuit simulation; device measurements; drain bias; drain resistance; gate bias; gate length; model description; nonlinear model description; source resistance; Art; Circuit simulation; Doping; Electrical resistance measurement; Human computer interaction; Length measurement; MOSFETs; Resistors; Virtual colonoscopy; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Electronics, 1998. Proceedings. ICSE '98. 1998 IEEE International Conference on
Conference_Location
Bangi
Print_ISBN
0-7803-4971-7
Type
conf
DOI
10.1109/SMELEC.1998.781157
Filename
781157
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