BSIM3v3 based degradation compact model for circuit simulation of non-volatile flash memories

Author

Schuler, F. ; Kowarik, O. ; Hoffmann, K.

Author_Institution

Bundeswehr Munich Univ., Neubiberg, Germany

fYear

1998

fDate

1998

Firstpage

100

Lastpage

104

Abstract

A BSIM3v3.1 based flash memory degradation compact model for circuit simulators has been developed. By a physics based modification of the Fowler-Nordheim equation, the tunnel current can be calculated considering both positive and negative oxide charges. It has been shown that every known endurance characteristic can be simulated by this model. It allows a precise simulation of worst case operation of flash memories and an optimized circuit design

Keywords

circuit optimisation; circuit simulation; electron traps; flash memories; hole traps; integrated circuit design; integrated circuit modelling; integrated memory circuits; random-access storage; BSIM3v3 based degradation compact model; BSIM3v3.1 based flash memory degradation compact model; circuit simulation; circuit simulators; endurance characteristic simulation; flash memories; negative oxide charges; nonvolatile flash memories; optimized circuit design; physics based Fowler-Nordheim equation modification; positive oxide charges; tunnel current; worst case operation; Character generation; Circuit simulation; Degradation; Design optimization; Electron traps; Equations; Flash memory; Nonvolatile memory; Physics; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Electronics, 1998. Proceedings. ICSE '98. 1998 IEEE International Conference on

Conference_Location

Bangi

Print_ISBN

0-7803-4971-7

Type

conf

DOI

10.1109/SMELEC.1998.781158

Filename

781158