• DocumentCode
    3015550
  • Title

    ErxY2−xSiO5 thin film waveguide for high optical gain per length at 1.53 μm

  • Author

    Suh, Kiseok ; Lee, Shinyoung ; Chang, Jee Soo ; Kim, Inyong ; Shin, Jung H. ; Lee, Hansuek ; Park, Namkyoo

  • Author_Institution
    Dept. of Phys., Korea Adv. Inst. of Sci. & Technol. (KAIST), Daejeon
  • fYear
    2008
  • fDate
    17-19 Sept. 2008
  • Firstpage
    338
  • Lastpage
    340
  • Abstract
    Ridge-type ErxY2-xSiO5 waveguides were fabricated. Amorphous ErxY2-xSiO5 was deposited using reactive ion beam sputter deposition, and crystallized by high-temperature annealing. The inversion level achieved was 0.4, limited by grain-boundary scattering and multimodedness of waveguide.
  • Keywords
    annealing; erbium compounds; grain boundaries; integrated optics; optical fabrication; optical waveguides; sputter deposition; yttrium compounds; ErxY2-xSiO5; grain-boundary scattering; high-temperature annealing; inversion level; ion beam sputter deposition; optical gain; thin film waveguide; waveguide fabrication; waveguide multimodedness; wavelength 1.53 mum; Annealing; Erbium; Optical attenuators; Optical films; Optical refraction; Optical scattering; Optical variables control; Optical waveguides; Sputtering; Stimulated emission;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Group IV Photonics, 2008 5th IEEE International Conference on
  • Conference_Location
    Cardiff, Wales
  • Print_ISBN
    978-1-4244-1769-8
  • Electronic_ISBN
    978-1-4244-1768-1
  • Type

    conf

  • DOI
    10.1109/GROUP4.2008.4638192
  • Filename
    4638192
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3015550