• DocumentCode
    3015567
  • Title

    Fabrication and responsivity spectra of p-Ge/i-Si/n-Si near-infrared photodiodes

  • Author

    Ishikawa, Yasuhiko ; Park, Sungbong ; Osaka, Jiro ; Wada, Kazumi

  • Author_Institution
    Dept. of Mater. Eng., Univ. of Tokyo, Tokyo
  • fYear
    2008
  • fDate
    17-19 Sept. 2008
  • Firstpage
    341
  • Lastpage
    343
  • Abstract
    Responsivity spectra are measured for p-Ge/i-Si/n-Si diodes favorable for the high-frequency operation. In spite of thin (90 nm) p-Ge absorption layer, free-space responsivities of ~10 mA/W are obtained, corresponding to the internal quantum efficiency as large as 20%.
  • Keywords
    elemental semiconductors; germanium; infrared detectors; p-i-n photodiodes; silicon; Ge-Si; absorption layer; internal quantum efficiency; near-infrared photodiodes; responsivity spectra; Absorption; Annealing; Charge carrier processes; Dielectric breakdown; Dielectric constant; Electric breakdown; Electrons; Fabrication; Photodiodes; Semiconductor diodes;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Group IV Photonics, 2008 5th IEEE International Conference on
  • Conference_Location
    Cardiff
  • Print_ISBN
    978-1-4244-1769-8
  • Electronic_ISBN
    978-1-4244-1768-1
  • Type

    conf

  • DOI
    10.1109/GROUP4.2008.4638193
  • Filename
    4638193
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3015567