Title :
High Quality Factor with Fundamental Resonant Mode near the Bandedge of GaN Triangular Submicron Laser Cavity
Author :
Lai, C.M. ; Wu, H.-M. ; Huang, P.-C. ; Yeh, B.-C. ; Chou, C.-L. ; Peng, L.-H.
Author_Institution :
Ming Chuan Univ., Taoyuan
Abstract :
Optically-pumped, single-mode stimulated emission was observed on GaN triangular submicron-cavity bounded by {10-10} facets. FDTD analysis indicates a high-Q factor (103) resultant from material´s dispersion effect near the bandedge.
Keywords :
III-V semiconductors; Q-factor; gallium compounds; laser cavity resonators; optical pumping; stimulated emission; wide band gap semiconductors; GaN; finite difference time-domain analysis; fundamental resonant mode; optical pumping; quality factor; stimulated emission; triangular submicron laser cavity; Dispersion; Finite difference methods; Gallium nitride; Laser modes; Photonic band gap; Photonic crystals; Q factor; Resonance; Stimulated emission; Time domain analysis;
Conference_Titel :
Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-834-6
DOI :
10.1109/CLEO.2007.4453200
