Title :
Photovoltaic effect in ultra-thin a-Si/SiO2 multilayered structures
Author :
Shatveryan, A.A. ; Anopchenko, A. ; Hossain, S.M. ; Marconi, A. ; Wang, M. ; Pucker, G. ; Bellutti, P. ; Pavesi, L.
Author_Institution :
Dept. of Phys., Univ. of Trento, Trento
Abstract :
Photovoltaic and photoconductive properties of ultra-thin a-Si/SiO2 multilayers grown by PECVD and annealed at 1150degC were studied. A quantum yield greater than one is observed due to secondary carrier generation from interface trap states.
Keywords :
annealing; elemental semiconductors; interface states; multilayers; photoconductivity; photovoltaic effects; plasma CVD; semiconductor-insulator boundaries; silicon; silicon compounds; PECVD; Si-SiO2; annealing; interface trap states; photoconductive properties; photovoltaic effect; quantum yield; secondary carrier generation; temperature 1150 degC; ultrathin multilayered structures; Monitoring; Oxidation; Photoconducting materials; Photovoltaic effects; Photovoltaic systems; Plasma chemistry; Plasma devices; Plasma simulation; Plasma temperature; Solar power generation;
Conference_Titel :
Group IV Photonics, 2008 5th IEEE International Conference on
Conference_Location :
Cardiff
Print_ISBN :
978-1-4244-1769-8
Electronic_ISBN :
978-1-4244-1768-1
DOI :
10.1109/GROUP4.2008.4638210
