• DocumentCode
    3015854
  • Title

    Photovoltaic effect in ultra-thin a-Si/SiO2 multilayered structures

  • Author

    Shatveryan, A.A. ; Anopchenko, A. ; Hossain, S.M. ; Marconi, A. ; Wang, M. ; Pucker, G. ; Bellutti, P. ; Pavesi, L.

  • Author_Institution
    Dept. of Phys., Univ. of Trento, Trento
  • fYear
    2008
  • fDate
    17-19 Sept. 2008
  • Firstpage
    390
  • Lastpage
    392
  • Abstract
    Photovoltaic and photoconductive properties of ultra-thin a-Si/SiO2 multilayers grown by PECVD and annealed at 1150degC were studied. A quantum yield greater than one is observed due to secondary carrier generation from interface trap states.
  • Keywords
    annealing; elemental semiconductors; interface states; multilayers; photoconductivity; photovoltaic effects; plasma CVD; semiconductor-insulator boundaries; silicon; silicon compounds; PECVD; Si-SiO2; annealing; interface trap states; photoconductive properties; photovoltaic effect; quantum yield; secondary carrier generation; temperature 1150 degC; ultrathin multilayered structures; Monitoring; Oxidation; Photoconducting materials; Photovoltaic effects; Photovoltaic systems; Plasma chemistry; Plasma devices; Plasma simulation; Plasma temperature; Solar power generation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Group IV Photonics, 2008 5th IEEE International Conference on
  • Conference_Location
    Cardiff
  • Print_ISBN
    978-1-4244-1769-8
  • Electronic_ISBN
    978-1-4244-1768-1
  • Type

    conf

  • DOI
    10.1109/GROUP4.2008.4638210
  • Filename
    4638210
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3015854