DocumentCode :
3015863
Title :
Photovoltaic effect in Si/SiOx heterostructures
Author :
Van Loon, R. V A ; Catchpole, K.R. ; Polman, A.
Author_Institution :
Center for Nanophotonics, FOM Inst. AMOLF, Amsterdam
fYear :
2008
fDate :
17-19 Sept. 2008
Firstpage :
393
Lastpage :
394
Abstract :
Si/SiOx heterostructures show a photovoltaic effect when the samples are annealed to form Si quantum dots. Subsequently applying dielectric breakdown increases the short-circuit current by up to an order of magnitude.
Keywords :
annealing; elemental semiconductors; photoconducting materials; photovoltaic effects; semiconductor quantum dots; semiconductor-insulator boundaries; silicon; silicon compounds; stoichiometry; Si-SiOx; annealing; photovoltaic effect; short-circuit current; silicon quantum dots; silicon-silicon oxide heterostructure; stoichiometry; Annealing; Atmosphere; Contacts; Dielectric breakdown; Electric breakdown; Lighting; Photovoltaic effects; Silicon; Substrates; Sun;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Group IV Photonics, 2008 5th IEEE International Conference on
Conference_Location :
Cardiff
Print_ISBN :
978-1-4244-1769-8
Electronic_ISBN :
978-1-4244-1768-1
Type :
conf
DOI :
10.1109/GROUP4.2008.4638211
Filename :
4638211
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3015863
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