Driving-signal optimization for LDMOS-SOI class E power amplifier efficiency enhancement

Author

Montes, L.A. ; Villegas, Martine ; Baudoin, Genevieve

Author_Institution

STMicroelectronics S.A., Crolles, France

fYear

2009

fDate

20-21 April 2009

Firstpage

1

Lastpage

4

Abstract

A class E power amplifier operating at 3.7 GHz - one of the IEEE802.16e operating frequencies - has been simulated using a LDMOS SOI BSIM3SOI model. Various driving signal waveforms were tested in order to determine which one leads to best class E performances. 87% of drain efficiency and 74% of power added efficiency (PAE) with gain of 8.3 dB was obtained providing a clipped sinus driving signal to the PA, from the best of our knowledge, this is the highest PAE obtained at this frequency using LDMOS transistor.

Keywords

MOSFET; WiMax; circuit optimisation; microwave power amplifiers; silicon-on-insulator; BSIM3SOI model; IEEE802.16e; LDMOS transistor; class E power amplifier efficiency; driving-signal optimization; frequency 3.7 GHz; gain 8.3 dB; Breakdown voltage; CMOS technology; Capacitance; Linearity; Peak to average power ratio; Performance gain; Power amplifiers; Power generation; Silicon on insulator technology; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Wireless and Microwave Technology Conference, 2009. WAMICON '09. IEEE 10th Annual

Conference_Location

Clearwater, FL

Print_ISBN

978-1-4244-4564-6

Electronic_ISBN

978-1-4244-4565-3

Type

conf

DOI

10.1109/WAMICON.2009.5207257

Filename

5207257