Graphene Self Switching Diodes with high rectification ratios

This paper presents a new Graphene nanodevice that acts as a two terminal nanorectifier with a high rectification ratio, without the need for a p-n junction or a third gate terminal. The device´s operation is similar to that of Self-Switching Diodes (SSD) and is therefore named here as a Graphene Self-Switching Diode (G-SSD). Graphene´s 2D structure and its interesting electronic properties make it very well suited for building SSDs, while the simple planar architecture of SSDs simplifies the fabrication process of these devices on Graphene and avoids most processes that deteriorate Graphene´s excellent electronic properties, especially its high charge carrier mobility. Atomistic quantum simulation results, based on the Extended Huckel method and Nonequilibrium Green´s Function, are presented confirming the operation of G-SSDs as nanorectifiers, and achieving forward/reverse current rectification ratios greater than one order of magnitude.