The Simulation Breakdown Characteristic of 4H-SiC SBD with Field Rings

Author

Zhang, Fasheng ; Li, Xinran

Author_Institution

Sch. of Comput. & Inf. Eng., Central South Univ. of Forestry & Technol. (CSUFT), Changsha, China

fYear

2010

fDate

25-27 June 2010

Firstpage

3116

Lastpage

3118

Abstract

According to the avalanche impact ionization theory, the field rings (FR) edge termination technology is introduced to the 4H-SiC SBDs in order to improve the breakdown voltage speciality. This paper investigates the theory and the effect of field ring edge termination structures, and then made a numerical optimization using a two-dimensional device simulator ISE-TCAD. The simulation results show that variety parameters including spacing, doping concentration, implantation depth and the numbers of FR can have influence on the breakdown voltage.

Keywords

Schottky diodes; doping; electric breakdown; ion implantation; optimisation; 4H-SiC SBD; ISE-TCAD; avalanche impact ionization theory; breakdown voltage speciality; doping concentration; field ring edge termination structures; field rings edge termination technology; implantation depth; numerical optimization; simulation breakdown characteristic; spacing; two-dimensional device simulator; Doping; Electric breakdown; Mathematical model; Numerical models; Schottky diodes; Semiconductor process modeling; Silicon carbide; 4H-SiC SBD; Simulation; breakdown voltage; field rings;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical and Control Engineering (ICECE), 2010 International Conference on

Conference_Location

Wuhan

Print_ISBN

978-1-4244-6880-5

Type

conf

DOI

10.1109/iCECE.2010.760

Filename

5631705